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A Fully-Integrated Penta-Band Tx Reconfigurable Power Amplifier with SOI CMOS Switches for Mobile Handset Applications
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  • A Fully-Integrated Penta-Band Tx Reconfigurable Power Amplifier with SOI CMOS Switches for Mobile Handset Applications
  • A Fully-Integrated Penta-Band Tx Reconfigurable Power Amplifier with SOI CMOS Switches for Mobile Handset Applications
저자명
Kim. Unha,Kang. Sungyoon,Kim. Junghyun,Kwon. Youngwoo
간행물명
ETRI journal
권/호정보
2014년|36권 2호|pp.214-223 (10 pages)
발행정보
한국전자통신연구원
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

A fully-integrated penta-band reconfigurable power amplifier (PA) is developed for handset Tx applications. The output structure of the proposed PA is composed of the fixed output matching network, power and frequency reconfigurable networks, and post-PA distribution switches. In this work, a new reconfiguration technique is proposed for a specific band requiring power and frequency reconfiguration simultaneously. The design parameters for the proposed reconfiguration are newly derived and applied to the PA. To reduce the module size, the switches of reconfigurable output networks and post-PA switches are integrated into a single IC using a $0.18{mu}m$ silicon-on-insulator CMOS process, and a compact size of $5mm{ imes}5mm$ is thus achieved. The fabricated W-CDMA PA module shows adjacent channel leakage ratios better than -39 dBc up to the rated linear power and power-added efficiencies of higher than around 38% at the maximum linear output power over all the bands. Efficiency degradation is limited to 2.5% to 3% compared to the single-band reference PA.