A realization method of the microwave oscillator is proposed by the inherently stable transistor with a cavily resonator feedback loop. The real Part of the output impedance of the inherently stable bipolar transistor can be made to be negative at the resonance frequency by the high-Q cavity feedback loop, and the oscillation condition can be obtained with the matching section of the load. In this work the microwave transistor oscillator is realized with a silicon bipolar transistor HXTR 2101 and a reentrani cavity, and characteristic of the output power 10m Watts at 2.33 GHz osc. frequency can be verified experimentally.