Silicon carbide porous materials used for hot gas filters were prepared using oxide binder. Chamotte, frit and H3PO4 were starting materials to synthesize the oxide binder for high temperature-use. Room temperature bending strength of the silicon carbide porous body was increased with increasing firing temprature or with the amount of the content of frit in the oxide binder. However, in the oxidebinder fired above132$0^{circ}C$, cristobalite form of AlPO4 phase which undergoes rapid inversion became more prominent with increasing firing time. the average pore size of the silicon carbide filter materials was found to be about one third of the average grain size of the silicon carbide powder used in this study.