A suppression of turbulent fluid motion and a control of oxygen and dopants could be improved by application of magnetic field in Czochralski growth of silicon. The effect of an axial magnetic field on Czochralski system was numerically calculated. The fluid motions induced by temperature gradients and by crystal and crucible rotations were suppressed by magnetic force. The S/L interface was gradually flattened in proportion to the increase of magnetic field due to a reduced ascending velocity in the vicinity of center line. The t.emperature distributions in the melt at 8=0.3 Tesla were similar to those analyzed by the conduction heat transfer only. The dissipated amounts of heat flux from melt and crystal surfaces by Ar gas blowing was Jess than 3 %.