Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.