Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{AA}$, $c_{0}=6.7129{AA}$ in CdS and $a_{0}=4.3021{AA}$, $c_{0}=7.0142{AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${gamma}$), maximum allowable power dissipation and response time on these samples.