We have successfully fabricated a super low noise pseudomorphic HEMT(PHEMT) device with AlGaAs/InGaAs/GaAs sturcture by using improved T-Gate which have increased a large gaet cross-sectional area about two times in comparision with those of conventional T-gate processes. The PHEMSTs with 0.15$mu$m-long and 140$mu$m-wide gates have eshibited a super low noise characteristics, the noise figure of 0.45dB with associated gain of 10.87dB at 12GHz. The cut-off rewuqncy of the device is 94gHz with a transconductance of 418mS/mm.