Cu(hfac)$_2$,(Cu(II) hexafluoroacetylacetonate)를 프리커서로 하는 구리 화학증착에 대해 자유에너지 최소화법으로 열역학적 평형조성 계산을 수행하였다. Cu(hfac)$_2$-Ar계의 경우Cu(hfac)$_2$ 프리커서 자체의 열분해로부터 모든 공정조건에서 증착박막내로의 탄소 출입이 관찰되었다. Cu(hfac)$_2$-H$_2$,계에서는 Cu(hfac)$_2$-Ar계보다 낮은 온도에서 구리박막이 증착되며, H$_2$입력비 및 반응온도의 증가에 따라 응축상의 석출형태는 C(s)+CuF(s)로부터 C(s)+CuF(s)+Cu(s), C(s)+Cu(s), Cu(s), C(s)의 순으로 변화되는 것으로 나타났다.
Chemical vapor deposition of copper from the Cu(hfac)$_2$, Cu(II) hexafluoroacetylacetonate precursor, has been thermodynamically investigated by the minimization of Gibbs free energy of the system. For the Cu(hfac)$_2$-Ar system, carbon incorporation into the deposited films was observed in all the process conditions, which is presumably inherent from the thermal decomposition of the Cu(hfac)$_2$, precursor. For the Cu(hfac)$_2$-H$_2$system, lower temperatures were required than those of the Cu(hfac)$_2$-Ar system for the depositon of the copper films. Furthermore, we identified that the appearances of the condensed phases were sequentially changed from the codeposits of C(s)+CuF(s) to C(s)+CuF(s)+Cu(s), C(s)+Cu(s), Cu(s), and C(s), when the H$_2$input ratio and th reaction temperature were increased.
