Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${ imes}10^{11}{Omega}{cdot}cm$ before the annealing to about 5${ imes}10^{13}{Omega}{cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${ imes}10^{10}cm^{2}{cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{circ}C$/cm$^{2}$.