Periodic gratings for 1.55$mu$m distributed feedback laser diode (DFB LD) have been fabricated by a holographic interference exposure system using an etalon stabilized Ar ion laser. We obtain a good development condition at developer concentration of 65% and obtain etching rate of 1000$AA$/min at 20.deg. C by the mixed solution HBr:HNO$_{3}$:H$_{2}$O(1:1:10 in volume ratio). We obtain good first order grating with period of 2400${AA}[pm}2{AA}$ at etching time of 45 sec from grating period and diffraction efficiency measurement, and SEM observation of grating fabricated on InP substrate.