The use of holographic interference lithography and removal techniques to corrugate GaAs substrate have been studied. The periodic photoresist structure, which serves as a protective mask during etching, is holographically prepared. Subsequently periodic V-grooved pattern is formed on the GaAs substrate by conventional a H$_{2}$SO$_{4}$-H$_{2}$O$_{2}$-H$_{2}$O wet etching. The linewidth of a GaAs pattern is about 0.4$mu$m and the depth is 0.5$mu$m A quantum wires(QWRs) array is well formed on the V-grooved substrate by MOCVD (metalorganic chemical vapor deposition) growth of GaAs/Al$_{0.5}$Ga$_{0.5}$As (50$AA$/300$AA$) quantum wells. The formation of QWR array is confirmed by the temperature dependent photoluminescence (PL) measurement. The intensive PL peak with a FWHM of 6meV at 21K shows the high quality of the QWR array.