In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${mu}$A/cm$^{2}$.