In this study, Selenium device was fabricated by vacuum evaporation method with the substrate temperature at room temperature and its electrical and optical properties were investigated to be used in optical device. The film properties largely depended on the transmittance and annealing time, and improved with aging owing to stress release. We found that the photocurrent of the films increase linearly with light illumination. As a result, Selenium device made by this method yielded a short circuit current density of 10.5mA/$ extrm{cm}^2$, an open circuit voltage of 39OmV.