This paper describes a scalable systolic synchronous memory for digital signal processing and packet switching. The systolic synchronous memory consists of the 2-D array of small memory blocks which are fully pipelined and communicated in three directions with adjacent blocks. The maximum delay of a small memory block becomes the operation speed of the chip. The array configuration is scalable for the entire memory size requested by an application. it has the initial latency of N+3 cycles with NxN array configuration. We designed an experimental 200 MHz 4Kb static RAM chip with the 4x4 array configuration of 256 SRAM blocks. It was fabricated is 0.8$mu extrm{m}$ twin-well single-poly double-metal CMOS technology.