We have successfully grown Cl-doped ZnSe epitaxial layers on GaAs(100) sub-strates by HWE using $ZnCl_2$ as a doping source. The Cl-doped ZnSe layers showed mirrorlike morphology and good crystallinity. It has been found that the layer exhibited an n-type conduction with low resistivity. The carrier concentration is, obtained about $10^{16} extrm {cm}^{-3}$, where a resistivity reached 10 $Omega extrm {cm}$. The layer with an appropriate doping level exhibited blue photoluminescence at room temperature. The strong blue PL was obtained at the hall mobility of $100^2 extrm {cm}$/Vㆍsec.