In our paper is reported a new 3D(dimensional) trajectory split approach with greatly improved efficiency for the Monte Carlo simulation of the 3D profiles of implanted ionand point defect concentrations in single-crystal silicon. This approach has been successfully implemented in our TRICSI Monte Carlo code. Combined with the previously developed model for damage accumalation in our TRICSI code, this model allows phasically based dynamic simulation of 3D profiles over an subsequent process simulation such as diffusion modeling and simulation. A typical time saving of over 10 timeshas been achieved for 3D simulation. Our method ensures much better region aground the implanted area. For 1-D simulation, the optimized condition for trajectory split has set to 3,000 pseudoparticles with 2 split branches.