Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS($CH_3SiCl_3$) as a source and $H_2$ or $N_2$ as a diluent gas. The experiments were performed at a fixed condition such as a flow rate of 100 sccm for each MTS and carrier gas a flow rate of 300 sccm for diluent gas addition and a total pressure of 5 torr. The effect of temperature ranged from $900^{circ}C$ to $1350^{circ}C$ and the alteration of diluent gas species on the growth rate and structure of deposits has been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases. At both high temperature above $1300^{circ}C$ and low temperature below $1050^{circ}C$ regions the deposition rate of $N_2$ addition is faster than that of $H_2$ one but at $1100{leq}T_{dep}{leq}1250^{circ}C$ middle temperature range the opposite result obtained. It seems that these differences of deposition rate might result from boundary layer thickness and the supersaturation variations at each deposition temperature. Texture of (111), (220) and (311) planes of $eta$-SiC was maintained above $1250^{circ}C$ for $N_2$ addition whereas (111) plane was preferably orientated above $1150^{circ}C$ for $H_2$ addition. In case of $N_2$ addition $alpha$-SiC phase was observed with temperature increase. Surface morphology of SiC films were gradually changed from smooth structure to rough one with temperature increase for both diluent gas additions.