- ITO 기판에 제작된 PLZT 박막의 소성온도에 따른 특성
- ㆍ 저자명
- 최형욱,장낙원,박창엽,Choi. Hyung-Wook,Jang. Nak-Won,Park. Chang-Yub
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 1998년|11권 2호|pp.128-132 (5 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{mu}m$ to $15{mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${mu}C/cm^2$ and Optical transmittance was decreased.