$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3(PLT(28))$ thin films were fabricated by pulsed laser deposition. PLT films deposited on $Pt/Ti/SiO_2/Si$ at $600^{circ}C$ had a preferred orientation in (111) plane and at $550^{circ}C$ had a (100) preferred orientation. We found that (111) preferred oriented films had well grown normal to substrate surface. This PLT(28) thin films of $1{mu}m$ thickness had dielectric properties of ${varepsilon}_r$=1300, dielectric $loss{fallingdotseq}0.03 $. and had charge storage density of 10 [${mu}C/cm^2$] and leakage current density of less than $10^{-6}[A/cm^2]$ at 100[kV/cm]. These results indicated that the PLT(28) thin films fabricated by pulsed laser deposition are suitable for DRAM capacitor application.