We investigated the crystalline behavior in active ion implanted silicon through Raman spectroscopy. Four a-Si(amorphous Si) peaks were observed that are related to the ion implantation induced a-Si layer. After the isochronical anneal(30min). and isothermal anneal($450^{circ}C$), noticeable recovery of crystalline-Si peak at 519cmulcorner and peak center shift of the a-Si TO from 465cmulcorner to 480cmulcorner were observed by RNM(Random Network Model). By applying RNM and SCLM(Spatial Correlation Length Model), the peak center and FWHM(the Full Width at half Maximum) of a-Si were changed dramatically between Tulcorner=$200^{circ}C$ and 30$0^{circ}C$. From the results, it can be said that there is an abrupt structural change at this temperature region.