As a new approache(extrusion-sintering process) to fabricate the thermoelectric materials, it has been at tempted to extrude and sinter the powders simultaneously. It was possible to produce the highly dense <$(Bi,Sb)_2(Te,Se)_3$-based thermoelectrics with sound surface appearances and microstructures by adjusting the process variables. For the p-type materials, the Seeback coefficient was increased with the amount of Te dopants, and the thermoelectric figure of merit appeared to be $2.5 imes10^{-3}/K$ at room temperature when doped with 3 at % Te. The n-type specimen doped with 0.16 mol% $SbI_3$ showed the thermoelectric figure of merit of $1.8 imes10^{-3}/K$. In both p-type an 우-type materials, the carrier mobility an the thermoelectric figure of merit parallel to the extrusion direction were higher than those perpendicular to it.