For microelectronic packaging application, the crystallizable glass powder in CaO-$A1_2O_3-SiO_2-B_2O_3$system was mixed with various amounts of alumina inclusions (approx 4 $mu extrm{m}$), and its sintering behavior, crystallization behavior, and dielectric constant were examined in terms of vol% of alumina and the reaction between the alumina and the glass. Sintering of the CASB glass powder alone at $900^{circ}C$ resulted in full densification (99.5%). Sintering of alumina-filled composite at $900^{circ}C$ also resulted in a substantial denslfication higher than 97% of theoretical density, In this case, the maximum volume percent of alumina should be less than 40%. XRD analysis revealed that there was a partial dissolution of alumina into the glass. This alumina dissolution, however, did not show the particle growth and shape accommodation. Therefore, the sintering of both the pure glans and the alumina-filled composite was mainly achieved by the viscous flow and the redistribution of the glass. Alumina dissolution accelerated the crystallization initiation time at $1000^{circ}C$ and hindered the densification of the glass. Dielectric constants of both the alumina-filled glass and the glass-ceramic composites were increased with increasing alumina content and followed rule of mixture. In case of the glass-ceramic matrix composites showed relatively lower dielectric constant than the glass matrix composite. Furthermore, as alumina content increased, crystallization behavior of the glass was changed due to the reaction between the glass and the alumina. As alumina reacted with the glass matrix, the major crystallized phase was shifted from wollastonite to gehlenite. In this system, alumina dissolution strongly depended on the particle size: When the particle size of alumina was increased to 15 $mu extrm{m}$, no sign of dissolution was observed and the major crystallized phase was wollastonite.