In this investigation, we fabricated RBSN (Reaction Bonded Silicon Nitride) using the static nitriding system which could be advantageous for commercialization. Firstly, Si compacts of different sizes were made, and then nitridation rates were investigated as a function of added static gas pressure. The reaction schedule was obtained by pre-experiments. In case of small samples, the variation of ${alpha}$, ${eta}$ phases between the inside and the outside region of the specimens was examined after the samples were nitrided under 1 bar and 1.5 bar reaction pressure. On the other hand, large samples of Si compact with the size of 36 mm for diameter and 23 mm for thickness were nitrided for 26 hours of the total nitridation time, which showed a complete and homogeneous nitriding reaction from the outside to the inside of the samples, although the time was considerably shorter than that needed for convertional nitridation. Nitridation rates obtained at the early stage of reaction were proportional to the reaction gas pressures. The sequences of the nitridation reaction with the thickness were as follows 1) the outside, 2) the inside and 3) the intermediate area of the specimen. These results wer eobtained from the coloration of cross sectioned specimens that had various nitridation rates. Total nitriding reaction kinetics was controlled by chemical reaction, not by diffusion of the nitrogen gas.