Lead titanate thin films were fabricated on Si(100) wafer and ITO-coated glass substrates by metal organic chemical vapor deposition using ultrasonic spraying. When the ratio (Ti/Pb) of starting materials was 1.2, the films deposited on Si wafer had a single perovskite phase. The films deposited on ITO-coated glass had higher growth rate than that on Si wafer. As deposition temperature was increased from $530^{circ}C$ to $570^{circ}C$, dielectric constant was increased due to the increase of crystallinity and grain size. At $570^{circ}C$, dielectric constant and dielectric loss of the films were 205 and 0.016, respectively. When the deposition temperature is higher than $600^{circ}C$, dielectric constant was decreased.