We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $AA$ between $MgTiO_3$films and the Si substrate.