When a vision chip for edge detection using CMOS process is designed, there is a necessity to implement local light adaptive-function for detecting distinctive features of an image at a wide range of light intensities. Local light adaptation is to achive the almost same output level by changing the size of receptive-fields of the local horizontal cell layers according to input light intensities, based on the lateral inhibitive-function of the horizontal cell. Thus, the almost same output level can be obtained whether input light intensities are much or less larger than background. In this paper, the horizontal cells using a resistive network which consists of p-MOSFETs were modeled and analyzed, and the local light adaptive-mechanism of the designed vision chip using the resistive network was verified.