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Study on Electrical Properties of X-ray Sensor Based on CsI:Na-Selenium Film
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  • Study on Electrical Properties of X-ray Sensor Based on CsI:Na-Selenium Film
  • Study on Electrical Properties of X-ray Sensor Based on CsI:Na-Selenium Film
저자명
Park. Ji-Koon,Kang. Sang-Sik,Lee. Dong-Gil,Choi. Jang-Yong,Kim. Jae-Hyung,Nam. Sang-Hee
간행물명
Transactions on electrical and electronic materials
권/호정보
2003년|4권 3호|pp.10-14 (5 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65 ${mu}m$-CsI:Na/30 ${mu}m$-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ${mu}m$ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below $400 pA/cm^2$ at 10 V/${mu}m$. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.