- X7R용 적층 칩 세라믹 캐패시터 조성의 희토류 첨가에 따른 유전 특성
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- 이석원,윤중락
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2003년|16권 12호|pp.1080-1086 (7 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
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- 기타
Effects of E$_2$O$_3$. HO$_2$O$_3$ and Dy$_2$O$_3$ addition on dielectric properties of non-reducible BaTiO$_3$ based X7R dielectrics with Ni electrode have been studied in a reduced atmosphere. As the content of rare-earth with E$_2$O$_3$. HO$_2$O$_3$, Dy$_2$O$_3$ was less than 3wt%, The TCC(Temperature Capacitance Change) and insulation resistance characteristics were improved by compensate the oxygen vacancies due to occupy either the Ba or Ti site. We developed the composition of X7R (EIA standard) for higher capacitance MLCC which had high reliability electric properties by the addition of Er ion into BaTiO$_3$ + MgO + Y2O$_3$ + MnO + (Ba$sub$0.4/Ca$sub$0.6/)SiO$_3$ composition.