- 초경합금기판 위에 성장되는 다이아몬드 막의 특성
- ㆍ 저자명
- 김봉준,박상현,박재윤
- ㆍ 간행물명
- 전기학회논문지. The transactions of the Korean Institute of Electrical Engineers. C/ C, 전기물성·응용부문
- ㆍ 권/호정보
- 2004년|53권 7호|pp.387-394 (8 pages)
- ㆍ 발행정보
- 대한전기학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.