$La_{0.7}Sr_{0.3}MnO_3$ 박막을 rf 마그네트론 스퍼터를 이용하여 챔버 내 산소가스유량비를 0, 40, 80 sccm 으로 조절하고 후열처리 공정 없이 기판온도를 $350^{circ}C$로 유지하면서 $SiO_2$/Si(100) 및 Si(100) 기판에 증착하였다. 증착된 $La_{0.7}Sr_{0.3}MnO_3$ 박막은 $SiO_2$/Si(100), Si(100) 기판 모두 (100), (110), (200)면을 갖는 polycrystalline 상태였으며, oxygen flow rate이 증가함에 따라 박막의 grain size가 증가하였다. 증가되는 grain size로 인하여 grain boundary가 감소하였고 따라서 높은 oxygen flow rate에서 증착된 박막은 면저항이 감소하는 현상을 나타내었다. $SiO_2$/Si 기판과 Si 기판에 증착된 LSMO 박막의 TCR 값은 약 -2.0 $sim$ -2.2%를 나타내었다.
$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.
