By controlling the number of electrons transferred to the emitting layer, highly efficient three-wavelength WOLEDs were fabricated. Such WOLEDs are different from those made using simple stacking of RGB emitting layers in that the movement distribution of electrons transferred to emitting layer could be adjusted using the difference in LUMO energy level and that lights of all 3 wavelengths could be emitted through appropriate arrangement of RGB emitting layers. WOLED device with the structure of m-MTDTA (40 nm)/NPB (10 nm)/ Coumarin6 doped $Alq_3$ (3%) (8 nm)/ Rubrene doped NPB (5%) (15 nm)/NPB (2 nm)/ DPVBi (20 nm)/$Alq_3$ (20 nm)/LiF (1 nm)/Al (200 nm) showed high luminance efficiency of 8.9 cd/A and color purity of (0.31, 0.40). In addition, WOLED device with the thickness of non-doped NPB layer increased from 2 nm to 3 nm to increase blue light emission showed a luminance efficiency of 7.6 cd/A and color purity of (0.28, 0.36).