We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $HfO_2$/p-Si structures. The $HfO_2$ film was grown at $200^{circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. TEMAHf and $H_2O$ were used as the hafnium and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TEMAHf pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $HfO_2$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.