CMP process is an essential element in the semiconductor product processes in Chemical Mechanical Polishing. Taken as a whole, CMP is one process, but concretely, it is a detail process which consists of polishing, cleaning, and so on. Especially, the polishing and cleaning are key points in the whole process. Polishing rate is the most important factor and is related with deposition of slurry in the polishing process. Each outlet velocities is the most important factors in cleaning process. And when the velocities are more uniform, the cleaning becomes more effective. In this research, based on these factors, we performed a numerical analysis for effective polishing and cleaning which can be applied to industrial field. Consequently, we figured out that more than one opened nozzle is more effective than one opened nozzle at the polishing pad in case of this research. And we confirmed that the revised models have the uniform velocity distribution more than the previous model of the cleaning nozzle.