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용매열 합성법을 통하여 알루미늄을 도핑한 니켈옥사이드의 제조와 그 결정구조적, 전기적 특성
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  • 용매열 합성법을 통하여 알루미늄을 도핑한 니켈옥사이드의 제조와 그 결정구조적, 전기적 특성
저자명
홍선기,지미정,이민진,정성헌,설광희,최병현,Hong. Sun-Ki,Ji. Mi-Jung,Lee. Min-Jin,Jung. Sung-Hun,Seol. Kwang-Hee,Choi. Byung-Hyun
간행물명
한국재료학회지
권/호정보
2012년|22권 11호|pp.631-635 (5 pages)
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한국재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{circ}C$.