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나노크기 표면 요철을 이용한 GaN LED의 광추출효율 향상
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  • 나노크기 표면 요철을 이용한 GaN LED의 광추출효율 향상
저자명
정재우,김사라,정준호,정종율,Jung. Jae-Woo,Kim. Sarah,Jeong. Jun Ho,Jeong. Jong-Ryul
간행물명
한국재료학회지
권/호정보
2012년|22권 11호|pp.636-641 (6 pages)
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한국재료학회
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정기간행물|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.