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Diffusion barrier characteristics of molybdenum nitride films for ultra-large-scale-integrated Cu metallization (I); Surface morphologies and characteristics of sputtered molybdenum nitride films
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  • Diffusion barrier characteristics of molybdenum nitride films for ultra-large-scale-integrated Cu metallization (I); Surface morphologies and characteristics of sputtered molybdenum nitride films
  • Diffusion barrier characteristics of molybdenum nitride films for ultra-large-scale-integrated Cu metallization (I); Surface morphologies and characteristics of sputtered molybdenum nitride films
저자명
Jeon. Seok-Ryong,Lee. You-Kee,Park. Jong-Wan
간행물명
The Journal of Korean vacuum science & technology
권/호정보
1997년|1권 1호|pp.24-29 (6 pages)
발행정보
한국진공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Surface morphologies and fundamental characteristics of molybdenum nitride films deposited by reactive dc magnetron sputtering were studied for application to Cu diffusion barrier. A phase transformation from Mo to $gamma$-Mo$_2$N phase at 0.5$N_2$ flow ratio.($N_2$/(Ar+$N_2$)) equal to and larger than 0.2, whereas a second phase transformation to $gamma$-MoN phase at 0.5 N2 flow ratio, With the variation of the N2 ratio the surface morphologies of the films were generally smooth except the cases of 0.2 and 0.3$N_2$ gas rations, where build-up of film stresses occurred. $gamma$-Mo$_2$N film was found to crystallize at the deposition temperature of 40$0^{circ}C$. The surfaces of $gamma$-Mo$_2$N films deposited up to 40$0^{circ}C$ were smooth, but the film deposited at 50$0^{circ}C$ had very rough surface morphology. It seems that this was due to the building-up of thermal stresses at the high deposition temperature, which might lead to hillock formation.