Increasing of Flash memory in the Semiconductor and embedded System memory area market share. Also Flash memory take up more system area and these more affecting system a lot. Accordingly, a larger memory capacity is required in the same area to reduce the internal size. On the cell structure type at flash memory the according to NOR/NAND are classified and the characteristics of the cell floating gate according to SLC(Single Level Cell)and MLC(Multi Level Cell) TLC(Triple Level Cell) are divided. NAND type Flash memory speed is slow compared with NOR type Flash memory but a NAND-type flash memory is more used in the mobile market where demand suddenly increases with good point that a price is in comparison with NOR-type a lot. Accordingly, MLC NAND-type flash memory of the fault detecti on is becoming increasingly critical of the test. Now compare TLC flash memory with MLC flash memory, and this thesis propose TLC flash memory test algorithm for ram-style fault and disturbance fault.