- Graphene field-effect transistor for radio-frequency applications : review
- ㆍ 저자명
- Jeong-Sun Moon
- ㆍ 간행물명
- Carbon LettersKCI
- ㆍ 권/호정보
- 2012년|13권 1호(통권47호)|pp.17-22 (6 pages)
- ㆍ 발행정보
- 한국탄소학회|한국
- ㆍ 파일정보
- 정기간행물|ENG| PDF텍스트(0.68MB)
- ㆍ 주제분야
- 자연과학
Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for highperformance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.
1. Introduction 2. Status of Epitaxial Graphene-on-SiC Transistors 3. Graphene FET RF Performance 4. Graphene FET Ambipolar RF Applications 5. Conclusions Acknowledgements References