Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $AA$ to 8000$AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$ imes$10$^{-7}$ ($Omega$.cm)$^{-1}$ , and 3~4$ imes$10$^{-6}$ ($Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$AA$-thick poly-Si films.