AZO transparent conducting thin film were fabricated by DC magnetron sputtering using the Zn: Al (2% aluminu contained ) alloy target with inducing microwave to the plasma, and the effect of microwave was studied. The optical transmittance, the resistivity and dynamic deposition rate at the applied voltage to target of 420 V was 50~70%, $ 5.5{ imes}10^{-3}{Omega}$cm and 6,000 $AA extrm{mm}^2$/J, respectively. After annealing AZO coated glass at $400^{circ}C$ for 30 minutes, the light transmittance was increased to 80% and electrical conductivity was also increased two times, reached to resistivity of $2.0{ imes}10^{-3}{Omega}$cm.